✦ LIBER ✦

Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursors

✍ Scribed by H. Protzmann; F. Höhnsdorf; Z. Spika; W. Stolz; E.O. Göbel; M. Müller; J. Lorberth

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-purity In0.53Ga0.47As layer grown b

✍ K. Ohtsuka; T. Ohishi; Y. Abe; H. Sugimoto; T. Matsui; H. Ogata 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 307 KB

Photoluminescence of undoped In0.53Ga0.4

✍ Towe, E. 📂 Article 📅 1982 🏛 American Institute of Physics 🌐 English ⚖ 516 KB

Growth of thin In0.53Ga0.47As layers by

✍ Peter S. Whitney; Clifton G. Fonstad 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 277 KB

Electrical properties ofp+/n+In0.53Ga0.4

✍ C. C. Shen; P. T. Chang; K. Y. Choi 📂 Article 📅 1993 🏛 Springer 🌐 English ⚖ 365 KB

Properties of Zn-doped P-type In0.53Ga0.

✍ E. D. Towe; T. J. Zamerowski 📂 Article 📅 1982 🏛 Springer US 🌐 English ⚖ 335 KB

Gettering Properties of Praseodymium in

✍ Dr. Gwo-Cherng Jiang 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 420 KB 👁 1 views