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High resolution capacitance spectroscopy of LPE In0.53Ga0.47As grown on Fe doped InP-substrate and VPE GaAs grown on Cr-doped GaAs-substrate

✍ Scribed by K.-A. Brauchle; D. Bimberg; K.-H. Goetz; H. Jürgensen; J. Selders


Publisher
Elsevier Science
Year
1985
Weight
216 KB
Volume
129
Category
Article
ISSN
0378-4363

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