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Properties of thin silicon carbide films prepared by rapid thermal annealing

✍ Scribed by Beshkova, M; Grigorov, K; Nedkov, I; Massi, M; Sismanoglu, B; Maciel, H; Velchev, N B

Book ID
120577871
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
446 KB
Volume
356
Category
Article
ISSN
1742-6588

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Thin CNx films prepared by vacuum rapid
Thin CNx films prepared by vacuum rapid thermal annealing
✍ G Beshkov; DB Dimitrov; St Georgiev; P Petrov; L Zambov; B Ivanov; C Popov; M Ge πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 269 KB

The properties of thin CN x layers prepared by rapid thermal annealing (RTA) are compared with CN x layers obtained from N 2 plasma treatment. Carbon films of 6000 A ˚thickness were deposited by magnetron sputtering system on p-type silicon substrates. The samples were treated in an RTA system in N