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Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing

✍ Scribed by Yuwen Zhao; Wenjing Wang; Feng Yun; Ying Xu; Xianbo Liao; Zhixun Ma; Guozhen Yue; Guanglin Kong

Book ID
108472751
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
115 KB
Volume
62
Category
Article
ISSN
0927-0248

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πŸ“œ SIMILAR VOLUMES

Thin CNx films prepared by vacuum rapid
Thin CNx films prepared by vacuum rapid thermal annealing
✍ G Beshkov; DB Dimitrov; St Georgiev; P Petrov; L Zambov; B Ivanov; C Popov; M Ge πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 269 KB

The properties of thin CN x layers prepared by rapid thermal annealing (RTA) are compared with CN x layers obtained from N 2 plasma treatment. Carbon films of 6000 A ˚thickness were deposited by magnetron sputtering system on p-type silicon substrates. The samples were treated in an RTA system in N