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Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film

✍ Scribed by Wang, Y.H; Lin, J; Huan, C.H.A; Feng, Z.C; Chua, S.J

Book ID
122493492
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
395 KB
Volume
10
Category
Article
ISSN
0925-9635

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## Abstract We study the influence of high‐temperature annealing (1100–1200 Β°C) on the crystallization of nitrogen‐doped silicon films deposited by LPCVD (low‐pressure chemical vapor deposition) at low temperature (465 Β°C) from disilane Si~2~H~6~ and ammonia NH~3~. Scanning electron microscopy (SEM