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Properties of Polycrystalline Si[sub 1−x]Ge[sub x] Films Grown by Ultrahigh Vacuum CVD Using Si[sub 2]H[sub 6] and GeH[sub 4]

✍ Scribed by Kang, S.-K.; Kim, J. J.; Ko, D.-H.; Kang, H. B.; Yang, C. W.; Ahn, T. H.; Yeo, I. S.; Lee, T. W.; Lee, Y. H.

Book ID: 121690099
Publisher: The Electrochemical Society
Year: 2003
Tongue: English
Weight: 659 KB
Volume: 150
Category: Article
ISSN: 0013-4651
DOI: 10.1149/1.1539501

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