✦ LIBER ✦
Electrical and Compositional Properties of Co-Silicided Shallow p[sup +]-n Junction Using Si-Capped/Boron-Doped Si[sub 1−x]Ge[sub x] Layer Deposited by UHVCME
✍ Scribed by Huang, Hsiang-Jen; Chen, Kun-Ming; Chang, Chun-Yen; Huang, Tiao-Yuan
- Book ID
- 121686061
- Publisher
- The Electrochemical Society
- Year
- 2001
- Tongue
- English
- Weight
- 240 KB
- Volume
- 148
- Category
- Article
- ISSN
- 0013-4651
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