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Properties of Oxide Film Atomic Layer Deposited from Tetraethoxy Silane, Hafnium Halides, and Water

✍ Scribed by Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Hegde, Rama I.; Gilmer, David C.; Tobin, Philip J.

Book ID
125850002
Publisher
The Electrochemical Society
Year
2004
Tongue
English
Weight
340 KB
Volume
151
Category
Article
ISSN
0013-4651

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✍ K. Kukli; M. Ritala; M. Leskelä; T. Sajavaara; J. Keinonen; A.C. Jones; N.L. Tob 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 272 KB 👁 1 views

## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow