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Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

✍ Scribed by Keller, S.; Suh, C. S.; Chen, Z.; Chu, R.; Rajan, S.; Fichtenbaum, N. A.; Furukawa, M.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K.

Book ID: 120492298
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 433 KB
Volume: 103
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2838214

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