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P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition

✍ Scribed by C. J. Eiting; P. A. Grudowski; R. D. Dupuis

Publisher: Springer US
Year: 1998
Tongue: English
Weight: 111 KB
Volume: 27
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-998-0388-5

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