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Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

✍ Scribed by Wang, C. X.; Tsubaki, K.; Kobayashi, N.; Makimoto, T.; Maeda, N.


Book ID
121267424
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
407 KB
Volume
84
Category
Article
ISSN
0003-6951

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## Abstract Transport properties of the two‐dimensional electron gas in AlGaN/GaN heterostructures grown by ammonia molecular‐beam epitaxy are experimentally investigated. Conventional Hall and Shubnikov–de Haas measurements as well as investigations of quantum transport phenomena are reported. It