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Properties of GaAs nanowhiskers grown on a GaAs(111)B surface using a combined technique

✍ Scribed by A. A. Tonkikh; G. E. Cirlin; Yu. B. Samsonenko; I. P. Soshnikov; V. M. Ustinov

Book ID
110140108
Publisher
Springer
Year
2004
Tongue
English
Weight
430 KB
Volume
38
Category
Article
ISSN
1063-7826

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Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A