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Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

โœ Scribed by G. E. Cirlin; A. D. Bouravleuv; I. P. Soshnikov; Yu. B. Samsonenko; V. G. Dubrovskii; E. M. Arakcheeva; E. M. Tanklevskaya; P. Werner


Book ID
107470614
Publisher
Springer-Verlag
Year
2009
Tongue
English
Weight
275 KB
Volume
5
Category
Article
ISSN
1931-7573

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The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi