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Properties of buried insulating layers in silicon formed by high dose implantation at 60 keV

✍ Scribed by W. Skorupa; K. Wollschläger; R. Grötzschel; J. Schöneich; E. Hentschel; R. Kotte; F. Stary; H. Bartsch; G. Götz

No coin nor oath required. For personal study only.

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