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Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE

✍ Scribed by O.Yu. Ledyaev; A.E. Cherenkov; A.E. Nikolaev; I.P. Nikitina; N.I. Kuznetsov; M.S. Dunaevski; A.N. Titkov; V.A. Dmitriev


Book ID
104556505
Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
173 KB
Volume
0
Category
Article
ISSN
1862-6351

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A transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC substrates is presented. A transition region of about 100 nm between the 4H-