๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Production etch processing for GaAs

โœ Scribed by Roy Szweda


Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
1008 KB
Volume
13
Category
Article
ISSN
0961-1290

No coin nor oath required. For personal study only.

โœฆ Synopsis


Production etch processing for CaAs

Roy Szweda

I

CaAs manufacturing is moving more towards "silicon like" processes, driven by the need to produce evercheaper devices. This issue we look at dry etching, one of the techniques that is underpinning today's modern compound semiconductor fabs and providing good business for several suppliers.


๐Ÿ“œ SIMILAR VOLUMES


Tegal etch systems for GaAs
๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 39 KB
Surface processes in digital etching of
โœ T. Meguro; M. Ishii; K. Kodama; Y. Yamamoto; K. Gamo; Y. Aoyagi ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 301 KB
Epoxy bond and stop-etch (EBASE) techniq
โœ M.V. Weckwerth; J.A. Simmons; N.E. Harff; M.E. Sherwin; M.A. Blount; W.E. Baca; ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 202 KB

The epoxy bond and stop-etch (EBASE) technique enables both the frontside and the backside processing of very thin (โˆผ 3000 ร…) GaAs/AlGaAs epitaxial layer structures. Using this technique, a conventionally processed epitaxial layer structure is inverted and epoxied to a new host substrate. The origin