Production etch processing for GaAs
โ Scribed by Roy Szweda
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 1008 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0961-1290
No coin nor oath required. For personal study only.
โฆ Synopsis
Production etch processing for CaAs
Roy Szweda
I
CaAs manufacturing is moving more towards "silicon like" processes, driven by the need to produce evercheaper devices. This issue we look at dry etching, one of the techniques that is underpinning today's modern compound semiconductor fabs and providing good business for several suppliers.
๐ SIMILAR VOLUMES
The epoxy bond and stop-etch (EBASE) technique enables both the frontside and the backside processing of very thin (โผ 3000 ร ) GaAs/AlGaAs epitaxial layer structures. Using this technique, a conventionally processed epitaxial layer structure is inverted and epoxied to a new host substrate. The origin