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Surface processes in digital etching of GaAs

✍ Scribed by T. Meguro; M. Ishii; K. Kodama; Y. Yamamoto; K. Gamo; Y. Aoyagi


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
301 KB
Volume
225
Category
Article
ISSN
0040-6090

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Wet Chemical Digital Etching of GaAs at Room Temperature. -The new title technique uses H2O2 to form an GaAs oxide layer in a self-limiting process at a constant layer thickness of β‰ˆ 15 . ANG. for soak times from 15 to 120 s. In a second step the oxide layer is removed by an acid (e.g. HCl) without