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Auger analysis of etched (100) GaAs surfaces

โœ Scribed by A. Iliadis


Publisher
Elsevier Science
Year
1982
Tongue
English
Weight
173 KB
Volume
44
Category
Article
ISSN
0038-1098

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GaAs (100) wafers were etched in mixtures of hydrogen atoms and methyl radicals. The atoms were formed in a remote hydrogen plasma, and a fraction of these were converted into methyl radicals by introducing methane into the flow system upstream from the semiconductor surface. The flux of hydrogen at