Process optimisation of DUV photoresists for electron beam lithography

✍ Scribed by S. Thoms; D. Macintyre

• Book ID: 104306568
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 788 KB
• Volume: 46
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00083-0

✦ Synopsis

This paper describes work carried out to optimise two DUV photoresists for high resolution electron beam lithography using experimental design techniques. Shipley UV5 XM positive tone resist and UVN2 negative tone resist have been studied. Screening experiments were initially carried out to identify significant factors influencing processing. For UV5 a Box-Behnken design was carried out and used to produce response surface plots. In-air delay effects were significant for UVN2. Optimised procedures were used to produce 70 nm lines and spaces in 300 nm thick layers of UV5 and discrete lines of 60 nm in 300 nm thick films of UVN2.