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Process integration of Pr-based high-k gate dielectrics

✍ Scribed by A.U. Mane; Ch. Wenger; G. Lupina; T. Schroeder; G. Lippert; R. Sorge; P. Zaumseil; G. Weidner; J. Dabrowski; H.-J. Müssig

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
370 KB
Volume
82
Category
Article
ISSN
0167-9317

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📜 SIMILAR VOLUMES

Performance of current mirror with high-
Performance of current mirror with high-k gate dielectrics
✍ F. Crupi; P. Magnone; A. Pugliese; G. Cappuccino 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 261 KB

This work compares the performance of the basic current mirror topology by using two different materials for gate dielectrics, the conventional SiON and an Hf-based high-k dielectrics. The impact of gate leakage and of channel length modulation on the basic current mirror operation is described. It