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Process damage-free damascene metal gate technology for gentle integration of epitaxially grown high-k

✍ Scribed by Ralf Endres; Yordan Stefanov; Frank Wessely; Florian Zaunert; Udo Schwalke


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
962 KB
Volume
85
Category
Article
ISSN
0167-9317

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