Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method

✍ Scribed by Hiroaki Arimura; Shinya Horie; Yudai Oku; Takashi Minami; Naomu Kitano; Motomu Kosuda; Takuji Hosoi; Takayoshi Shimura; Heiji Watanabe

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 431 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.02.133