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Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment

✍ Scribed by I. V. Antonova; V. P. Popov; D. V. Kilanov; E. P. Neustroev; A. Misuk

Book ID
110120217
Publisher
Springer
Year
1999
Tongue
English
Weight
55 KB
Volume
33
Category
Article
ISSN
1063-7826

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## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450Β°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐kno