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Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

✍ Scribed by Kang, B. S.; Kim, S.; Ren, F.; Johnson, J. W.; Therrien, R. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.; Chu, S. N.G.; Baik, K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

Book ID: 121849204
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 333 KB
Volume: 85
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1800282

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