Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

✍ Scribed by Kang, B. S.; Kim, S.; Kim, J.; Ren, F.; Baik, K.; Pearton, S. J.; Gila, B. P.; Abernathy, C. R.; Pan, C.-C.; Chen, G.-T.; Chyi, J.-I.; Chandrasekaran, V.; Sheplak, M.; Nishida, T.; Chu, S. N. G.

• Book ID: 121733350
• Publisher: American Institute of Physics
• Year: 2003
• Tongue: English
• Weight: 60 KB
• Volume: 83
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1631054