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Pressure effect on the binding energies of donors in GaAs/AlxGa1−xAs heterojunctions

✍ Scribed by S.L. Ban; X.X. Liang


Book ID
108344328
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
117 KB
Volume
94-95
Category
Article
ISSN
0022-2313

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The influence of growth patterns in the transmission properties of nonabrupt GaAs/ Al V Ga \V As heterojunctions is investigated. Five interfacial growth patterns, representative of interfacial alloy variations generated by different growth techniques, are used. It is shown that carrier transmission