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Resonant peaks in the transmission coefficient of compositionally nonabrupt GaAs/AlxGa1−xAs heterojunctions

✍ Scribed by Valder N. Freire; Margarida M. Auto; Gil A. Farias

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
385 KB
Volume
11
Category
Article
ISSN
0749-6036

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✍ J.Ribeiro Filho; G.A. Farias; V.N. Freire 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 254 KB

The transmission properties of compositionally nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) heterojunctions are calculated by taking into account the spatial dependence of the carrier effective mass through the nonabrupt interface. The description of the nonabrupt hete

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Transmission properties of electrons through \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x}\) As symmetrical double-barriers with abrupt and nonabrupt interfaces are calculated and compared. The interface potential and carrier effective-mass are obtained assuming a linear variation of the alumi

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✍ José Ribeiro Filho; Gil A. Farias; Valder N. Freire 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 302 KB

The influence of growth patterns in the transmission properties of nonabrupt GaAs/ Al V Ga \V As heterojunctions is investigated. Five interfacial growth patterns, representative of interfacial alloy variations generated by different growth techniques, are used. It is shown that carrier transmission