The influence of growth patterns in the transmission properties of nonabrupt GaAs/ Al V Ga \V As heterojunctions is investigated. Five interfacial growth patterns, representative of interfacial alloy variations generated by different growth techniques, are used. It is shown that carrier transmission
✦ LIBER ✦
The influence of subband structure on the thermoelectric power of GaAsAlxGa1−xAs - heterojunctions
✍ Scribed by C. Ruf; M.A. Brummell; E. Gmelin; K. Ploog
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 330 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0749-6036
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