✦ LIBER ✦

Pressure-dependent studies of the DX centre in Si- and Sn-doped n+GaAs

✍ Scribed by J.C. Portal; D.K. Maude; T.J. Foster; L. Eaves; L. Dmowski; M. Nathan; M. Heiblum; J.J. Harris; R.B. Beall; P.E. Simmonds

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Magneto-transport investigation of Si-Do

✍ F.E. Früh; J.M. Sallese; M. Beck; D.K. Maude; U. Willke; M. Rabary; J.C. Portal; 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 222 KB

Pressure and temperature dependence of s

✍ P.R. Hageman; M.H.J.M. de Croon; J.N.H. Reek; L.J. Giling 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 756 KB

Temperature dependence of silicon doping

✍ P.R. Hageman; X. Tang; M.H.J.M. de Croon; L.J. Giling 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 480 KB

Orientation dependence of S, Zn, Si, Te,

✍ R. Bhat; C. Caneau; C.E. Zah; M.A. Koza; W.A. Bonner; D.M. Hwang; S.A. Schwarz; 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 482 KB

Mechanism of redox reactions at semicond

✍ W. Plieth; S. Wetzenstein 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 545 KB

Study of electron traps in the thin inte

✍ R.L. Van Meirhaeghe; W.H. Laflère; F. Cardon 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 422 KB