✦ LIBER ✦
Mechanism of redox reactions at semiconductor surfaces: dependence on doping density and redox concentration in the system n-GaAs/Br−, BrO−3 and n-GaAs/Fe2+, Fe3+
✍ Scribed by W. Plieth; S. Wetzenstein
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 545 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0013-4686
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