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Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates

✍ Scribed by R. Bhat; C. Caneau; C.E. Zah; M.A. Koza; W.A. Bonner; D.M. Hwang; S.A. Schwarz; S.G. Menocal; F.G. Favire


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
482 KB
Volume
107
Category
Article
ISSN
0022-0248

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