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Preparation of Si1−xGex thin crystalline films by pulsed excimer laser annealing of heavily Ge implanted Si

✍ Scribed by F. Repplinger; E. Fogarassy; A. Grob; J.J. Grob; D. Muller; B. Prévot; J.P. Stoquert; S. De Unamuno

No coin nor oath required. For personal study only.

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