Freestanding GaN wafers were produced by a newly developed self-separation method. Thick GaN layers were grown using hydride vapor phase epitaxy on a sapphire substrate with GaN seeds. The separation of the thick GaN layers took place during the growth sequence at the interface of GaN/sapphire, beca
Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substrates
β Scribed by Toru Nagashima; Akira Hakomori; Takafumi Shimoda; Keiichiro Hironaka; Yuki Kubota; Toru Kinoshita; Reo Yamamoto; Kazuya Takada; Yoshinao Kumagai; Akinori Koukitu; Hiroyuki Yanagi
- Book ID
- 116630158
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 685 KB
- Volume
- 350
- Category
- Article
- ISSN
- 0022-0248
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## Abstract By using the hydride vapor phase epitaxy and a voidβassisted separation method, freestanding 3 inch GaN substrates were successfully fabricated for the first time, and the process showed an excellent reproducibility. A thick GaN layer 3.2 inches in diameter was easily separated from the
## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperatureβdepe