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Preparation and properties of molecular beam epitaxy grown (Al0.5Ga0.5)0.48In0.52As

✍ Scribed by J. Barnard; C. Wood; L. Eastman

Book ID
126708508
Publisher
IEEE
Year
1982
Tongue
English
Weight
527 KB
Volume
3
Category
Article
ISSN
0741-3106

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πŸ“œ SIMILAR VOLUMES

In0.53Ga0.47As>In0.52Al0.48As quantum wi
In0.53Ga0.47As>In0.52Al0.48As quantum wire structures grown on (775)B-oriented InP substrates by molecular beam epitaxy
✍ S. Hiyamizu; Y. Ohno; S. Shimomura πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 423 KB

Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at