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High-quality Al0.48In0.52As grown by molecular beam epitaxy at high InP-substrate temperature

✍ Scribed by Eric Tournié; Yong-Hang Zhang; Klaus Ploog


Book ID
119124605
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
451 KB
Volume
11
Category
Article
ISSN
0167-577X

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In0.53Ga0.47As>In0.52Al0.48As quantum wi
✍ S. Hiyamizu; Y. Ohno; S. Shimomura 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 423 KB

Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at