Potential sputtering and kinetic sputtering from a water adsorbed Si(1 0 0) surface with slow highly charged ions

✍ Scribed by N. Okabayashi; K. Komaki; Y. Yamazaki

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 241 KB
• Volume: 232
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.03.052

✦ Synopsis

We measured charge state dependence and incident angle dependence of sputtering yields and two-dimensional (2D) position distributions for H + , Si + and SiOH + ions emitted from a water adsorbed Si(1 0 0) surface irradiated by a few keV Ar q+ (q = 4-8). It was found that (1) H + yield strongly depended on the charge state and increased with increasing incident angle, (2) Si + and SiOH + yields were independent of the charge state and increased with increasing incident angle.