The influence of post-annealing time on blistering characteristics induced by 5 Â 10 16 cm À2 ion-implanted H in Si <1 0 0> was studied in terms of the formation and growth of blisters. Ion energies consisted of 40 and 100 keV. Post-annealing treatments were carried out using furnace annealing (FA)
✦ LIBER ✦
Post-annealing temperature dependence of blistering in high-fluence ion-implanted H in Si 〈1 0 0〉
✍ Scribed by J.H. Liang; C.Y. Bai; D.S. Chao; C.M. Lin
- Book ID
- 108224143
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 381 KB
- Volume
- 266
- Category
- Article
- ISSN
- 0168-583X
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