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Variation in Si(1 0 0) surface roughness caused by H-termination during high-temperature Ar annealing

✍ Scribed by Koji Araki; Hiromichi Isogai; Ryuji Takeda; Koji Izunome; Xinwei Zhao

No coin nor oath required. For personal study only.

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Variation in Si(1&#xa0;0&#xa0;0) surface roughness caused by H-termination during high-temperature Ar annealing