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Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS

✍ Scribed by K. Nakajima; N. Hosaka; T. Hattori; K. Kimura

No coin nor oath required. For personal study only.

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Surface segregation of Ge during Si growth on Ge/Si(0&#xa0;0&#xa0;1) at low temperature observed by high-resolution RBS