Positive charging of thermal SiO2 layers: hole trapping versus proton trapping

✍ Scribed by V.V Afanas’ev; G.J Adriaenssens; A Stesmans

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 86 KB
• Volume: 59
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(01)00651-7

✦ Synopsis

Positive charging of thermal SiO layers on (100)Si related to injection of protons is compared to the hole trapping.

2 Proton trapping has initial probability close to 100% and shows little sensitivity to the annealing-induced oxygen deficiency of SiO . In contrast, the hole trapping in as-grown SiO shows much lower efficiency which increases strongly upon 2 2 annealing in qualitative correlation with higher density of O ≡Si ? defects (E9 centers) detected by electron spin resonance.

3 Despite these differences, the neutralization of positive charges induced by holes and protons has the same cross section, and in both cases is accompanied by atomic H release. Therefore, hole trapping is associated with release of a proton from a O ≡Si-H defect and its subsequent trapping in the oxide.