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Positioning effects on quantum dot solar cells grown by molecular beam epitaxy

โœ Scribed by Zhou, D.; Vullum, P. E.; Sharma, G.; Thomassen, S. F.; Holmestad, R.; Reenaas, T. W.; Fimland, B. O.

Book ID
121297317
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
608 KB
Volume
96
Category
Article
ISSN
0003-6951

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We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More