Ultra-thin polymer gate dielectrics for
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Yong-Young Noh; Henning Sirringhaus
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Article
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2009
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Elsevier Science
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English
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We have demonstrated top-gate polymer field-effect transistors (FETs) with ultra-thin (30-50 nm), room-temperature crosslinkable polymer gate dielectrics based on blending an insulating base polymer such as poly(methyl methacrylate) with an organosilane crosslinking agent, 1,6-bis(trichlorosilyl)hex