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Liquid gate dielectric field effect transistor for a radiation nose

โœ Scribed by Jin-Woo Han; M. Meyyappan; Jae-Hyuk Ahn; Yang-Kyu Choi

Book ID
116886253
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
913 KB
Volume
182
Category
Article
ISSN
0924-4247

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๐Ÿ“œ SIMILAR VOLUMES

Ultra-thin polymer gate dielectrics for
Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors
โœ Yong-Young Noh; Henning Sirringhaus ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 877 KB

We have demonstrated top-gate polymer field-effect transistors (FETs) with ultra-thin (30-50 nm), room-temperature crosslinkable polymer gate dielectrics based on blending an insulating base polymer such as poly(methyl methacrylate) with an organosilane crosslinking agent, 1,6-bis(trichlorosilyl)hex

Dielectric layers for organic field effe
Dielectric layers for organic field effect transistors as gate dielectric and surface passivation
โœ Diekmann, T. ;Pannemann, C. ;Hilleringmann, U. ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 957 KB

## Abstract Organic field effect transistors with the organic semiconductor pentacene, using silicon substrates, were successfully built on conventional inorganic dielectrics like silicon dioxide or silicon nitride. They can drive drain currents up to 15 mA. Beyond that, polymer films were investig