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A Retention Model for Ferroelectric-Gate Field-Effect Transistor

✍ Scribed by Shuai Huang; Xiangli Zhong; Yi Zhang; Qiuhong Tan; Jinbin Wang; Yichun Zhou

Book ID: 114620655
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 495 KB
Volume: 58
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2011.2162629

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