Disturb-Free Writing Operation for Ferroelectric-Gate Field-Effect Transistor Memories With Intermediate Electrodes

✍ Scribed by Horita, S.; Bui Nguyen Quoc Trinh

• Book ID: 114619817
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 651 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2009.2032744