A Dual-Channel Ferroelectric-Gate Field-Effect Transistor Enabling nand -Type Memory Characteristics

✍ Scribed by Kaneko, Y.; Tanaka, H.; Ueda, M.; Kato, Y.; Fujii, E.

• Book ID: 114620405
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 462 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2110653