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A-heterojunction and dielectrically insulated gate InP field effect transistors

โœ Scribed by C.M. Hanson; H.H. Wieder

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
532 KB
Volume
153
Category
Article
ISSN
0040-6090

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A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The