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Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy

✍ Scribed by Qiang Hu; Tongbo Wei; Ruifei Duan; Jiankun Yang; Ziqiang Huo; Yiping Zeng; Shu Xu


Book ID
113810383
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
553 KB
Volume
15
Category
Article
ISSN
1369-8001

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Red luminescence from freestanding GaN g
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## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperature‐depe