𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Polarity and morphology in seeded growth of bulk AlN on SiC

✍ Scribed by R. Dalmau; R. Schlesser; Z. Sitar

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
117 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Effect of AlN doping on the growth morph
Effect of AlN doping on the growth morphology of SiC
✍ N. B. Singh; E. Jones; A. Berghmans; B. P. Wagner; E. Jelen; S. McLaughlin; D. J πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 247 KB

## Abstract AlN doped SiC films were deposited on on‐axis Si‐face 4H‐SiC (0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 ΞΌm range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in t

Effect of the seed crystallographic orie
Effect of the seed crystallographic orientation on AlN bulk crystal growth by PVT method
✍ W. J. Wang; S. B. Zuo; H. Q. Bao; J. Wang; L. B. Jiang; X. L Chen πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 456 KB πŸ‘ 2 views

## Abstract The growth of AlN crystals by PVT method was investigated using TaC crucible in the temperature range of 2250‐2350 Β°C. AlN boules with 30 mm in diameter were successfully grown on the crucible lid by self‐seeded growth. The AlN boules consist of the spontaneously nucleated AlN single cr

Effects of growth direction and polarity
Effects of growth direction and polarity on bulk aluminum nitride crystal properties
✍ O. Filip; B.M. Epelbaum; M. Bickermann; P. Heimann; A. Winnacker πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 786 KB

Aluminum nitride (AlN) single crystals, approximately 25 mm in diameter and up to 15 mm thickness, were grown by the physical vapor transport (PVT) method in tungsten crucibles. To study the effect of growth direction and polarity, growth was performed using AlN seeds of very different orientations,