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Comparative study of initial growth stage in PVT growth of AlN on SiC and on native AlN substrates

✍ Scribed by B. M. Epelbaum; P. Heimann; M. Bickermann; A. Winnacker


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
469 KB
Volume
2
Category
Article
ISSN
1862-6351

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## Abstract AlN doped SiC films were deposited on on‐axis Si‐face 4H‐SiC (0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 ΞΌm range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in t